Photovoltage Characterization of MOS Capacitors.

Abstract

Surface photovoltage, capacitance and conductance measurements have been made on various metal-oxide-semi-conductor (MOS) capacitors fabricated on p-type Si wafers. Curves of photovoltage plotted against dc sample bias are found to exhibit structure arising from surface state effects which correlates well with that observed in the C-V/G-V curves. In the region near the middle of the Si bandgap the surface state density can be reduced by about an order of magnitude by annealing. An equivalent circuit approach is used to relate the photovoltage to the electrical parameters. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1977
Accession Number
ADA043517

Entities

People

  • F. Rothwarf
  • J. J. Winter
  • R. L. Streever

Organizations

  • United States Army Communications-Electronics Command

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Annealing
  • Capacitance
  • Capacitors
  • Chemical Compounds
  • Circuits
  • Electronics
  • Electrons
  • Equivalent Circuits
  • Frequency
  • Lasers
  • Light Sources
  • Materials
  • Materials Science
  • Measurement
  • Semiconductors
  • Standards

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology