Current and C-V Instabilities in Si02 at High Fields
Abstract
Results have been obtained concerning the interrelation of current and C-V instabilities in MOS capacitors subjected to negative gate high field pulsing. Rising current transients and negative C-V shifts both show the formation of positive charge in the oxide. However, this charge appears to be situated close to the electrodes rather than in bulk of the oxide and the temperature dependence of the rate of charge accumulation near the electrodes is different for the aluminum and silicon electrodes.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 02, 1977
- Accession Number
- ADA043740
Entities
People
- J. M. Aitken
- P. M. Solomon
Organizations
- IBM Thomas J. Watson Research Center