InSb MIS Development.

Abstract

Further improvement on both line and two-dimensional InSb CID arrays has been made. The sensitivity of line arrays has been improved by using thin-gate oxide and low-doping substrate materials, which reduce the input line capacitance. The co-planar two-dimensional array structure also has been further improved. Effort on a low-noise amplifier has been carried out and performance of the JFET preamplifier was much better than that of the MOSFET. The NETD for a line array was found to be 0.11 K using a JFET preamp and 0.5 K using a MOSFET. The measurement was made with a narrow spectral filter of 3.6 to 4.0 microns, f/3.25 lens system, and a 500 microsec. integration time. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1977
Accession Number
ADA043805

Entities

People

  • J. C. Kim
  • J. M. Swab

Organizations

  • General Electric

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Capacitance
  • Charge Transfer
  • Dynamic Range
  • Electronics
  • Electronics Laboratories
  • Impedance
  • Low Noise
  • Low Noise Amplifiers
  • Measurement
  • Military Research
  • P-N Junction Diodes
  • P-N Junctions
  • Resistance
  • Semiconductor Devices
  • Semiconductors
  • Two Dimensional

Fields of Study

  • Engineering
  • Physics

Readers

  • Image Processing and Computer Vision.
  • Optical Physics and Photonics.
  • Semiconductor Device Technology