Voltage and Current Measurements in HIFX Diodes
Abstract
Capacitive-voltage (V) monitors and shunt-resistor (I) monitors have been fabricated for the Harry Diamond Laboratories High-Intensity Flash X Ray Facility. Sensitivities of these monitors have been measured to an accuracy of 10 percent or better by improved pulse techniques. The monitors were used to measure V and I pulses at charge voltages between 2.0 and 5.0 MV for both high- and low-impedance (z) diodes. For the high-z diode, consisting of a hemispherical cathode and a planar anode, Z increases from 70 to 120 ohms as the cathode-anode gap is increased from 1.5 to 3.8 cm. For the low-Z diode, whose cathode and anode are both planar, Z increases from 7 to 33 ohms as the cathod- anode gap is increased from 0.4 to 1.4 cm. Electron energy spectra calculated from the V and I pulses are in reasonable agreement with those measured previously by means of a magnetic spectrometer. There is also general agreement between the time variation of gamma dose rate calculated from the V and I pulses and that measured with a scintillator-photodiode. However, the doses obtained by integrating the calculated dose rates are, on the average, 70 percent lower than those measured with CaF2:Mn thermoluminescent dosimeters.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1977
- Accession Number
- ADA043971
Entities
People
- Joseph D. Silverstein
Organizations
- Harry Diamond Laboratories