Frequency and Temperature Tests for Lateral Nonuniformities in MIS Capacitors

Abstract

Two techniques are presented for distinguishing between lateral nonuniformities and interface states in metal-insulator-semiconductor capacitors, one based on the frequency dependence of the response of interface states and the other on the freeze-in of carriers in interface states at liquid nitrogen temperature. Experimental examples are given of the use of both techniques.

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Document Details

Document Type
Technical Report
Publication Date
Mar 15, 1977
Accession Number
ADA044064

Entities

People

  • Chuan‐Chieh Chang
  • Walter C. Johnson

Organizations

  • Princeton University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Conduction Bands
  • Electrical Engineering
  • Electron Capture
  • Electronics
  • Electrons
  • Energy Bands
  • Engineering
  • Equations
  • Fermi Levels
  • Free Electrons
  • New Jersey
  • Personality
  • Semiconductors
  • Substrates
  • Transitions

Fields of Study

  • Physics

Readers

  • Fluid Dynamics.
  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Microelectronics - Microelectromechanical Systems