Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide-Semiconductor (MOS) Devices

Abstract

The enclosed papers discuss the trapped hole location and annihilation in Si, current and C-V instabilities in SiO2 at high fields, annealing of neutral electron traps in irradiated oxides, Al implanted into the SiO2 layer of MOS structures, electron trapping as a result of Al implantation, the initial oxidation regime of silicon oxidation and the electronic structure of SiO2, SixGe1-xO2, GeO2.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1977
Accession Number
ADA044606

Entities

People

  • D. J. Dimaria
  • D. R. Young
  • J. M. Aitken
  • T. Distefano
  • Z. A. Weinberg

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Annealing
  • Electron Beams
  • Electron Capture
  • Electrons
  • Films
  • Heat Treatment
  • High Temperature
  • Human-Machine Interaction
  • Materials
  • Measurement
  • Oxidation
  • Oxides
  • Plastic Explosives
  • Quantum Cascade Lasers
  • Radiation
  • Semiconductors

Fields of Study

  • Physics

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene