Crystal Mismatch in Electroluminescent Materials.

Abstract

The results of studies of interface structure in heterojunctions having near (001) orientations are briefly reported. Observations were carried out by X-ray topography, stress-induced birefringence and transmission electron microscopy and all support glide mechanisms and sources for the origin of the dislocations which compensate the misfit of the epilayer. In order to explore the effects of choosing different orientations on the interface structure, similar studies have been carried out on heterojunctions with 331 and 112 orientation. Preliminary results are reported. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Aug 31, 1977
Accession Number
ADA044683

Entities

People

  • C. A. B. Ball
  • C. Laird

Organizations

  • University of Pennsylvania

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Contrast
  • Dislocations
  • Electrical Properties
  • Electron Microscopes
  • Electron Microscopy
  • Electrons
  • Heterojunctions
  • Materials
  • Materials Science
  • Microscopes
  • Microscopy
  • Orientation (Direction)
  • Shear Stresses
  • Stresses
  • Substrates
  • Thickness
  • Transmission Electron Microscopy

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene