Les Defauts Ponctuels dans les Semiconducteurs (Point Defects in Semiconductors),

Abstract

The electronic and transport properties of semiconductors and their point defects are reviewed in connection with considerations of silicon.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1977
Accession Number
ADA045093

Entities

People

  • Jacques C. Bourgoin
  • James W. Corbett

Organizations

  • State University of New York at Albany

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capillary Electrophoresis
  • Carbonate Esters
  • Crystal Structure
  • Military Research
  • Point Defects
  • Semiconductors
  • Transport Properties

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene