High Voltage, High Power Transistors. Characteristics of Developmental Units.
Abstract
A group of ten samples of 300 volt, 10 and 25 ampere, silicon-power transistors manufactured by Westinghouse Electric Corporation has been received by the U.S. Naval Research Laboratory for evaluation. The units have been tested for breakdown, output- and saturation-voltage characteristics, and tabular and photographic data are presented. Breakdown voltages of the semiconductor device itself were of the order of 400 volts on the four samples which were enclosed in the latest case design. Output characteristics, current gain and saturation-voltage are satisfactory.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 05, 1961
- Accession Number
- ADA045477
Entities
People
- Wilmer M. Lawson Jr.
Organizations
- United States Naval Research Laboratory