Chemical Vapor Deposition of Silicon Nitride.
Abstract
Experimental work during the past year has established the basic processing outlines for the deposition of crystalline alpha-Si3N4 plates and dome geometries. Preliminary correlations between critical processing variables and microstructure have been established. Property evaluations of deposits include: flexure strength, Young's moduli, thermal expansion, electromagnetic transmittance and reflectance, microhardness and fracture toughness deduced from identation and grooved double-cantilever beam experiments. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1977
- Accession Number
- ADA045536
Entities
People
- J. J. Gebhardt
- J. O. Hanson
- R. A. Tanzilli
Organizations
- General Electric