Monolithic Laser.
Abstract
This report describes the accomplishment of a three-phased exploratory research program under Contract No. N00014-73-C-0288 to develop the first integrated optical transmitter. The initial efforts involved the development of a unique (Ga,In) As surface laser and high index infrared glass waveguides. The surface laser is a vapor-grown mesa structure with vertical grown crystalline facets furnishing the optical feedback. The structure can be placed and grown at will on a GaAs substrate using conventional photolithographic techniques. This unique laser structure represents a radical departure from conventional semiconductor laser technology. Ternary alloy Ga1-xInxAs mesas with 0<x<0.2 were grown and the details of their morphology determined. Optically pumped laser emission from mesas with 0<x<0.1 has been observed. Threshold pump powers, efficiencies, and emission characteristics have been determined. Also, a GaAs and Ga1-xInxAs(x < 0.8) mesa diode laser was successfully fabricated. The p-n junction was formed by Zn diffusion and implantation into the top of the mesas. The Ga1-xInxAs homojunction lasers are the first wavelength-tunable, monolithic electrical injection lasers and have been operated between liquid nitrogen and room temperatures. Monolithic arrays of up to six mesa laser have been operated with all the lasers oscillating simultaneously. Because these devices are homojunctions, their threshold current densities at room temperature are very high (approx 170 ka sq.cm.), and their efficiencies are low.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1977
- Accession Number
- ADA045672
Entities
People
- Kenneth L. Lawley
Organizations
- Texas Instruments