Use of Trichloroethylene for Charge Control in MOS Oxides.

Abstract

A fabrication facility for the preparation of Trichloroethylene/Oxide (TCE/O2) over the temperature range of 850 C - 1200 C is described. The TCE/02 oxide films obtained were of good quality, and uniform in the thickness range of 150-1500 angstrom. Electrical parameters such as Qss and Qo, were found to be at acceptable levels communsurate with values normally obtained in hydrochloric acid grown oxides or ultra-clean thermally grown oxides. (Author)

Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1977
Accession Number
ADA045714

Entities

People

  • Barbara Malley
  • Edwin R. Ahlstrom

Organizations

  • United States Army Communications-Electronics Command

Tags

DTIC Thesaurus Topics

  • Acids
  • Alkenes
  • Chemical Compounds
  • Fabrication
  • Films
  • Hydrochloric Acid
  • Ores
  • Oxide Films
  • Oxides
  • Oxygen Compounds
  • Rocks And Deposits
  • Thickness

Readers

  • Electronics Engineering
  • Nanofabrication and Microfabrication.
  • Surface Engineering/Surface Coating Technology.