Studies of Extrinsic Silicon Infrared Detectors.
Abstract
Studies of the material parameters which limit the performance of silicon extrinsic infrared detectors are reported. These parameters include the carrier mobilities and the thermal, optical and Auger-impact generation-recombination-trapping rates at impurity and defect centers and impurity-defect complexes. The transient capacitance methods have been used to obtain these material characterization parameters as well as the generation annealing-diffusion kinetics of the centers. The transient capacitance methods are refined to give concentration profiles of recombination centers. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1977
- Accession Number
- ADA046297
Entities
People
- C. T. Sah
Organizations
- University of Illinois Urbana–Champaign