Gallium Arsenide Vertical Channel Insulated Gate Field-Effect Transistor.

Abstract

The technologies necessary to fabricate a power, microwave frequency, vertical channel, gallium arsenide insulated gate field-effect transistor have been further developed. Planar devices that show FET action have been fabricated. The etching technology for a V-groove version of the vertical channel device has been explored. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1977
Accession Number
ADA047108

Entities

People

  • D. A. Tremere
  • D. L. Barrett
  • M. C. Driver

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Anodizing
  • Epitaxial Growth
  • Field Effect Transistors
  • Gallium Arsenides
  • Implantation
  • Ion Implantation
  • Light Sources
  • Materials
  • Measurement
  • Metals
  • Military Research
  • P-N Junctions
  • Phase
  • Resistance
  • Transistors
  • United States
  • Vapor Pressure

Readers

  • Integrated Circuit Design and Technology.

Technology Areas

  • Microelectronics