Thermal Resistance of Microelectronic Packages
Abstract
Computer simulation, IR and electrical temperature measurements were compared and evaluated for special thermal test packages. The junction size was varied and elevated chip-carrier temperatures were studied to determine their effects on the thermal characteristics. In addition a comparison of the film- carrier chip interconnection technique versus wire-bonding techniques was made. In general, the data showed that thermal resistnace increased significantly with elevated temperatures and with decreasing junction size. Thermal time constants increased with elevated temperature and increasing junction size. Little difference was found between the film carrier and wire-bond interconnection techniques when the chip is bonded to a chip-carrier, but the film carrier is significantly better if the chip is heat sunk only through its leads.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1977
- Accession Number
- ADA047110
Entities
People
- Gene K. Baxter
- J. Walter Brouillette
- James W. Anslow
Organizations
- Rome Laboratory