Electron Beam Semiconductor L-Band Amplifier.

Abstract

The goal of this program is to develop a 2000 watt L-Band amplifier capable of operating at a 1 percent duty cycle with 25 dB gain and an operating lifetime of 10,000 hours. During this period, two EBS diode runs were processed, the target holder, output matching circuit, and output RF window were designed, and four exploratory models were fabricated, evaluated and tested. (Author)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1976
Accession Number
ADA047111

Entities

People

  • Bruce W. Bell

Organizations

  • Watkins-Johnson Company

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Amplifiers
  • Assembly
  • Bulk Materials
  • Capacitance
  • Circuits
  • Electron Beams
  • Fabrication
  • Frequency
  • Guard Rings
  • Impedance
  • L Band
  • Materials
  • Photographs
  • Resonant Frequency
  • Semiconductor Devices
  • Semiconductors

Readers

  • Electronics Engineering

Technology Areas

  • Directed Energy
  • Microelectronics