Investigation of Technological Problems in GaAs
Abstract
This report presents the results of an investigation of technological problems associated with the growth and preparation of GaAs with emphasis on problems related to microwave devices. One of the most significant accomplishments of this program is the high uniformity and reproducibility of doping profiles achieved by ion implantation into semi-insulating substrates. Such results have brought GaAs ion implantation into maturity as a technique for preparation of device quality layers. These results are not only expected to lead to increased use of ion implantation for discrete FET device fabrication, but also to pave the way for the development of a planar GaAs IC technology. Experimental measurements of the low frequency noise of IMPATT diodes have been used to extract parameters useful for device design, such as intrinsic response time and multiplication factors under operating conditions. Measurements of ionization rates as functions of the electric field showed a strong dependence on doping concentration which has been qualitatively interpreted in terms of delays in promotion of the accelerated electrons into the higher conduction bands.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 24, 1977
- Accession Number
- ADA047312
Entities
People
- A. A. Immorlica
- A. Higgins
- C. P. Wen
- F. Eisen
- R. Zucca