Some Aspects of Using a Scanning Electron Microscope for Total Dose Testing.
Abstract
This report addresses a number of aspects involved in using a Scanning Electron Microscope (SEM) for radiation testing of semiconductor devices. Problems associated with using the low energy electron beam to simulate 60Co exposure and a method for estimating the total absorbed dose in critical device oxides are discussed. The method is based on the experimentally determined expression for electron energy dissipation versus penetration depth in solid materials of Everhart and Hoff. An appendix giving the method of estimating the total absorbed dose in a form sutiable for ASTM deliberations is included. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1977
- Accession Number
- ADA047425
Entities
People
- K. F. Galloway
- P. Roitman
Organizations
- National Institute of Standards and Technology