Surface Transport Studies for MOS Devices.
Abstract
Three topics concerned with conduction in inversion channels at a silicon surface were investigated. One was an experimental investigation of the behavior of free-carrier velocities in surface inversion layers as functions of fields normal and tangential to the inversion channel. Another was the study of DMOS (double-diffused MOS) transistors to clarify the behavior of conduction mechanisms in novel forms of these devices. The novel DMOS structures were studied because they offered processing advantages. Also there was an investigation into the mechanisms of hot carrier injection into silicon dioxide under surface avalanche-breakdown conditions. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1977
- Accession Number
- ADA047562
Entities
People
- R. S. Muller
Organizations
- University of California, Berkeley