Protective Coaxial Switching Devices.
Abstract
The use and performance of both polycrystalline NbO2 on NbO and single-crystal NbOx chips in a coaxial switching device has been investigated. The polycrystalline material, about 10 micrometers thick, does exhibit switching with a delay time of less than 1 ns. The threshold switching voltage is typically 100 to 300 V. A manufacturable packaging configuration with evaporated small area contacts has been developed. Step-by-step details of all pertinent fabrication procedures, from selection of as-received chips to final mounting and wire bonding of the completed units are described. Device stability for a range of pulse lengths has also been investigated and is discussed in some detail.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1977
- Accession Number
- ADA047732
Entities
People
- G. A. Slack
- H. R. Philipp
- L. M. Levinson
Organizations
- General Electric