Oscillatory Transport Coefficients in InAs Surface Layers.

Abstract

The resistivity and Hall coefficient of gated n-InAs epilayers have been measured at low temperatures utilizing differential techniques and a magnetic field swept from zero to six tesla. When the InAs surface is in accumulation, three distinct series of oscillations, periodic in inverse magnetic field, are observed. The temperature and magnetic field dependence of the oscillation amplitudes suggests an effective mass of .04 m sub e and a Dingle temperature of 26K. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Aug 15, 1977
Accession Number
ADA047738

Entities

People

  • H. A. Washburn
  • J. R. Sites

Organizations

  • Colorado State University

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Weapons Technologies

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Amplitude
  • Coefficients
  • Colorado
  • Electrical Measurement
  • Engineering
  • Ground State
  • Low Temperature
  • Magnetic Fields
  • Measurement
  • Military Research
  • New York
  • Ordnance Laboratories
  • Oscillation
  • Scattering
  • Surface Transportation

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Plasma Physics.
  • Semiconductor Device Technology