Radiation Effects on A1GaAs/GaAs Solar Cells Using 0.9-3.0 MeV Protons and 1.0-1.4 MeV Electrons.
Abstract
Aluminum gallium arsenide solar cells were irradiated with 1.0 and 1.4 MeV electrons, and with 0.9 and 3.0 MeV protons to determine radiation sensitivity. Electron fluences ranged from 1 x 10 to the 14th power to 3 x 10 to the 16 power electrons, 1 sq cm, and proton fluences from 5 x 10 to the 10 power to 2.7 x 10 to the 12th power/sqcm. A solar simulator and a tungsten lamp were used to evaluate changes in the current-voltage characteristics curves. In most cases, AlGaAs solar cells showed a greater resistance to radiation than silicon cells.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1977
- Accession Number
- ADA048037
Entities
People
- J. R. Cappelli
- L. F. Lowe
- L. W. James
- R. L. Moon
Organizations
- Rome Laboratory