Theory of Bound States Associated with n-Type Inversion Layers on Silicon.
Abstract
The ground state and two excited states of an electron bound to a charged impurity located at the interface between silicon and silicon dioxide have been investigated. The interface was taken to be parallel to a (001) plane and a static electric field p perpendicular to the surface was assumed. Calculations of the electron binding energies as functions of electric field were made for a bare charged impurity with screening by free carriers neglected. It was found that the binding energy increases with electric field and approaches that of the corresponding state of a two-dimensional hydrogen-like atom in the limit of infinite electric field. The case where the impurity is located within the oxide has also been investigated. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1977
- Accession Number
- ADA048216
Entities
People
- B. G. Martin
- G. M. Kramer
- Richard F. Wallis
Organizations
- University of California, Irvine