Interface Energies.

Abstract

A practical scheme for the calculation of interface energies has been developed. It combines the theory of generalized Wannier functions, the generalized recursion method for calculating local densities of states and electronic density, and the local density functional theory. As a first application of this method we are calculating the stacking fault energy of nickel using tight binding type Wannier functions for the d-electrons and ignoring the effect of the s-electrons. The d band degeneracy is fully taken into account. The method also allows one to handle charge transfer effects: a stacking fault perturbation potential is included and calculated quasi-self-consistently. Comparison is made between the moment scheme, the non-self-consistent scheme and the self-consistent scheme. We find that the self-consistent scheme affects very little the stacking fault energy compared with the non-self-consistent scheme.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1977
Accession Number
ADA048219

Entities

People

  • Cheng-chih Pei
  • Walter Kohn

Organizations

  • University of California, San Diego

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Atomic Orbitals
  • Atoms
  • Band Structures
  • Charge Density
  • Coefficients
  • Computations
  • D Band
  • Electron Density
  • Electrons
  • Energy Bands
  • Equations
  • Fermi Levels
  • Filled Bands
  • Ground State
  • Three Dimensional
  • Transition Metals
  • Wave Functions

Fields of Study

  • Physics

Readers

  • Computational Linguistics
  • Materials Science and Engineering.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics