Study of HgCdTe MIS Technology.

Abstract

Metal-insulator-semiconductor (MIS) devices were fabricated on single-crystal HgCdTe with both 5-micrometer and 12-micrometer cutoff wavelengths. The purpose was to evaluate existing technology and identify fundamental limitations, for the application of HgCdTe to monolithic intrinsic focal plane arrays. For 12-micormeter material it was shown that interband tunneling provides such a large dark current that a MIS device cannot store charge effectively. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Nov 15, 1977
Accession Number
ADA048224

Entities

People

  • David R. Rhiger
  • John D. Langan

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Capacitance
  • Crystal Structure
  • Detectors
  • E Band
  • Electron Density
  • Electron Energy
  • Electrons
  • Energy Bands
  • Fermi Levels
  • Focal Plane Arrays
  • Focal Planes
  • Materials
  • Measurement
  • Military Research
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics