Solid Phase Epitaxial Growth.

Abstract

Low-temperature epitaxial growth of Si by the solid-phase epitaxy (SPE) process has been studied to determine the effects of contaminants upon the growth process. The major sources of process-induced contaminants in SPE have been reviewed, and methods for eliminating or minimizing these have been developed. We show that under clean conditions an evaporated (amorphous) Si film will crystallize epitaxially on a Si(100) substrate when heated to 525 C, but that the growth is very sensitive to inhibition by atmospheric contaminants. Similarly, SPE growth in the system Si/Pd2Si/Si(A) has been found to proceed very differently under clean conditions as compared to the standard processing used in previous work. This difference is tentatively attributed to affects of contaminants on the Pd2Si interlayer, not on the Si(a) film as was previously believed. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1977
Accession Number
ADA048261

Entities

People

  • C. L. Anderson
  • J. A. Roth

Organizations

  • HRL Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Crystal Growth
  • Crystal Structure
  • Crystallization
  • Crystals
  • Epitaxial Growth
  • Films
  • Heat Energy
  • Ions
  • Low Temperature
  • Measurement
  • Metal Films
  • Microscopy
  • Solid Phases
  • Spectra
  • Standards
  • Thickness
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Environmental Remediation and Restoration.
  • Semiconductor Device Technology