Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide Semiconductor Devices

Abstract

The enclosed papers discuss the trapped hole location and annihilation in Si, current and C-V instabilities in SiO2 at high fields, annealing of neutral electron traps in irradiated oxides, Al implanted into the SiO2 layer of MOS structures, electron trapping as a result of Al implantation, the initial oxidation regime of silicon oxidation and the electronic structure of SiO2, SixGe(1-x)O2, GeO2.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1977
Accession Number
ADA048483

Entities

People

  • D. J. Dimaria
  • D. R. Young
  • J. M. Aitken
  • T. Distefano
  • W. R. Hunter

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Theory Of Solids
  • Computer Programs
  • Crystal Structure
  • Current Density
  • Electrons
  • Energy Bands
  • Field Effect Transistors
  • High Temperature
  • Implantation
  • Ionizing Radiation
  • Materials
  • Materials Science
  • Measurement
  • Metal Oxide Semiconductors
  • Resistance
  • Semiconductors
  • Square Waves

Fields of Study

  • Physics

Readers

  • Semiconductor Device Technology
  • Space Exploration and Orbital Mechanics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene