Modeling of High Current Injection into Bipolar Semiconductors.

Abstract

Two techniques were used in an attempt to solve the problem of high current injection into a bipolar semiconductor. The first technique was by finite differences, and the second was by the method of lines. Because of the physical model chosen for the system, neither method would converge. An extended bibliography is included. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1977
Accession Number
ADA048781

Entities

People

  • Edward O. Fuller

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Bipolar Junction Transistors
  • Differential Equations
  • Electronics
  • Electronics Laboratories
  • Electrons
  • Equations
  • Field Effect Transistors
  • New York
  • Partial Differential Equations
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Transistors
  • Two Dimensional

Readers

  • Computational Fluid Dynamics (CFD)
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics