Generation of Intermodulation by Electron Tunneling through Aluminum Oxide Films. Chapter I.
Abstract
In the Navy's Fleet Satellite Communication System (FLTSATCOM) the existence of nonlinear conduction mechanisms in passive hardware components has resulted in the generation of intermodulation (frequency mixing) which degrades the system performance. Consequently there is an urgent need for a systematic investigation of the basic mechanisms that can produce intermodulation. This report describes an investigation of the generation of RF intermodulation due to nonlinear conduction by electron tunneling through thin-film aluminum oxide junctions. Details are presented regarding the fabrication of junctions, their current-voltage characteristics, and the measurement of intermodulation power levels. The measured ratio of intermodulation power to signal power was 10 to the minus 15th power to 10 to the minus 11th power, which is significantly higher than the desired 10 to the minus 19th power. The measured intermodulation levels are correlated with the device circuit parameters and with existing tunneling theory. In addition the report describes some preliminary results of efforts to improve the conduction characteristics of such junctions by ion implantation. Initial implantation results with silver atoms are sufficiently promising to warrant further investigation with different atoms, greater implantation depths, and higher fluences
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 26, 1977
- Accession Number
- ADA049113
Entities
People
- C. A. Carosella
- C. D. Bond
- C. S. Guenzer
Organizations
- United States Naval Research Laboratory