Control of Mobile-Ion Contamination in Oxidation Ambients for MOS Device Processing.
Abstract
An alternative method for controlling the mobile-ion contamination in the oxidation ambients for MOS device processing is explored. Mobile-ion contamination in silicon dioxide films thermally grown in dry oxygen at 1000 C on silicon substrates has been studied by use of a double-wall fused-silica oxidation tube. The space between the tubes were alternatively filled with chlorine, room air, or sodium hydroxide gas to determine if a correlation exists between the presence of these substances in the jacket and the mobile-ion density in the oxide films. MOS capacitors were prepared on these films and mobile-ion densities were measured using conventional c-v techniques. The ion densities ranged from 10 to the 13th power to 10 to the 10th power/sq cm as a function of the jacket atmosphere. These preliminary results suggest that there is a correlation between the presence of cleaning or contaminating agents in the jacket and the mobile-ion density in the oxide films. Both cleaning and contaminating actions occur through the tube wall. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1978
- Accession Number
- ADA049631
Entities
People
- Richard Y. Koyama
- Santos Mayo
- Thomas F. Leedy
Organizations
- National Institute of Standards and Technology