Epitaxial Growth of Semi-Insulating GaAs

Abstract

The objective of this program is to develop techniques for the vapor phase growth of high resistivity epitaxial layers of gallium arsenide on semi- insulating gallium arsenide substrates. A capability to grow such layers of high quality material with minimum structural defects and good surface quality for use as 'buffer' layers prior to the growth of active layers for such devices as FETS and TELDS will eliminate the device performance problems caused by poor and inconsistent substrate quality.

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Document Details

Document Type
Technical Report
Publication Date
Dec 31, 1977
Accession Number
ADA050030

Entities

People

  • D. Yaney
  • S. T. Jolly

Organizations

  • Sarnoff Corporation

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Chromium
  • Conductivity
  • Detection
  • Epitaxial Growth
  • Flow
  • Gallium Arsenides
  • Ion Implantation
  • Laser Diodes
  • Mass Spectrometry
  • Materials
  • Measurement
  • Optical Absorption
  • Photoconductivity
  • Radiation
  • Spectroscopy
  • Substrates

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene