Radiation Characterization of Sequential Logic Circuits.

Abstract

This report describes the test techniques for radiation characterizing medium and large-scale integration (MSI/LSI) sequential logic circuits where few internal nodes are available for testing. Four sequential logic devices, two transistor-transistor-logic (TTL) technology devices and two complementary-metal-oxide-silicon (CMOS) technology devices were characterized. The devices were characterized for gamma dose-rate logic upset, total gamma dose survivability, and neutron fluence survivability. The data has been analyzed to determine the applicability of the testing techniques and procedures. (Author)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1978
Accession Number
ADA050476

Entities

People

  • Keith Bobo
  • Michael G. Knoll

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Space
  • Weapons Technologies

DTIC Thesaurus Topics

  • Air Force
  • Department Of Defense
  • Dose Rate
  • Electrical Engineering
  • Electronics
  • Failure Mode And Effect Analysis
  • Integrated Circuits
  • Ionizing Radiation
  • Large Scale Integration
  • Logic Gates
  • Metal Oxide Semiconductors
  • Physics Laboratories
  • Power Supplies
  • Radiation Effects
  • Semiconductor Devices
  • Semiconductors
  • Transistors

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Nuclear and Radiation Engineering.
  • Regression Analysis.