Photocurrent Suppression and Interface State Recombination in Mis-Schottky Barriers,

Abstract

The purpose of this work is to understand an important degradation mechanism in Schottky barrier photodetectors and solar cells. The I-V characteristics of Au-nSi devices under illumination show a pronounced photocurrent suppression at low voltages in the presence of an interfacial oxide layer of thickness > or = 20 A (intentionally introduced) but no suppression in the case of a carefully prepared near-intimate contact. The analysis of these devices takes into account the exchange of charge carriers between interface states and the metal (by tunneling) and between these states and the conduction and valence bands in the semiconductor. As suggested by the experiments, this shows that recombination in the interface states can be important only in the presence of a significant interfacial layer. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1975
Accession Number
ADA050938

Entities

People

  • H. C. Card
  • K. K. Ng

Organizations

  • Columbia University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Carriers
  • Detectors
  • Electronics
  • Electrons
  • Energy Bands
  • Fermi Levels
  • Illumination
  • Intensity
  • Low Voltage
  • New York
  • Oxides
  • Quantum Tunneling
  • Semiconductors
  • Short Circuits
  • Solar Cells
  • Solid State Electronics
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Solar Photovoltaics and Thermoelectric Devices.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene