Investigation of Solid-Solid Reactions in Metal Films on Silicon

Abstract

Investigations were conducted on solid-solid reactions in gold films evaporated on silicon substrates at deposition temperatures below the eutectic point (370 C). Both air- and vacuum-annealed structures were studied using correlated data from transmission electron microscopy/diffraction (TEM/TED), Auger electron spectroscopy (AES) profiling, and forward current-voltage (I-V) measurements. Results of these experiments show that the grain size in Au films deposited (or annealed) at temperatures from 25 C to 200 C increases from 50 anstrom (min) to saturation size of approximately 1 micro m at temperatures greater than 150 C.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1977
Accession Number
ADA051170

Entities

People

  • Jing Peng
  • R. A. Armistead
  • T. J. Magee

Organizations

  • SRI International

Tags

DTIC Thesaurus Topics

  • Annealing
  • Auger Electron Spectroscopy
  • Auger Electrons
  • Diffraction
  • Electrical Measurement
  • Electron Diffraction
  • Electron Microscopy
  • Electron Spectroscopy
  • Electrons
  • Films
  • Grain Boundaries
  • Grain Size
  • Heat Treatment
  • Measurement
  • Microscopy
  • Spectroscopy
  • Transmission Electron Microscopy

Fields of Study

  • Materials science
  • Physics

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene