Bibliography of Breakdown Effects in Semiconductors.

Abstract

The bibliographies presented in Appendices A and B of the subject report represent a Collection of technical documents and articles treating subjects related to conduction processes and failure mechanisms in bipolar semiconductors exposed to high amplitude electrical transients. The sources cited in Appendix B deal more directly with the failure phenomenology involved in the damage. Appendix A is divided into sections treating reverse bias processes and forward bias processes. Each of those sections is divided into parts for articles directly related to the topic, indirectly related to the topic, and peripherally related to the topic. Entries in each part are alphabetized according to author. Appendix B is divided into sections treating reverse bias failure, forward bias failure, interconnection failure, and general causes of failure. Each section includes separate parts for materials directly, indirectly, or peripherally related to the topic. Entries in each part are alphabetized according to author. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Aug 08, 1977
Accession Number
ADA051347

Entities

People

  • D. Wiensch
  • G. Neudeck

Organizations

  • Braddock Dunn & McDonald

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Electron Microscopes
  • Electronics
  • Electronics Industry
  • Electronics Laboratories
  • Failure Mode And Effect Analysis
  • Field Effect Transistors
  • Integrated Circuits
  • Magnetic Fields
  • Materials
  • P-N Junctions
  • Power Electronics
  • Semiconductor Devices
  • Semiconductor Diodes
  • Semiconductor Junctions
  • Semiconductors
  • Solid State Electronics

Readers

  • Business Analytics
  • Molecular and Cellular Biology
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics