Stannic Oxide Semiconductor Studies.

Abstract

High quality stannic oxide epilayers were grown in TiO2 substrates without evidence of thermal mismatch. Electrical characterization was performed and device applications were studied. Stannic oxide appears to be suitable for high temperature microwave Schottky barrier field effect transistors. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Feb 15, 1978
Accession Number
ADA051973

Entities

People

  • C. G. Fonstad

Organizations

  • Massachusetts Institute of Technology

Tags

DTIC Thesaurus Topics

  • Computer Science
  • Electrical Engineering
  • Electron Emission
  • Electrons
  • Energy Bands
  • Engineering
  • Field Effect Transistors
  • Films
  • High Temperature
  • Materials
  • Measurement
  • Mobility
  • Photoexcitation
  • Semiconductors
  • Single Crystals
  • Spectroscopy
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Electrochemical Engineering/ Fuel Cell Technologies
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene