Electronic and Optical Properties of SbSBr, SbSI and SbSeI.

Abstract

Electronic band structures of the ternary semiconductors SbSBr, and SbSeI have been obtained by using the empirical pseudopotential method (EPM) to fit our measured optical reflectivity data and earlier gap measurements. An SbSI band structure has been determined by fitting to earlier reflectivity and Raman spectroscopic data, and the results agree better with the data than do the results of an earlier preliminary EPM calculation. Above the SbSI conduction band minimum are secondary minima located midway along the Gamma 2 and Gamma X symmetry lines. These minima may in part be responsible for the observed microwave oscillation (Gunn effect) in this crystal. Similar minima in SbSBr and SbSeI are reported, suggesting these crystals might also show microwave properties. The total densities of states are presented. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1977
Accession Number
ADA051990

Entities

People

  • C. Y. Fong
  • F. Wooten
  • J. F. Alward
  • M. El-batanouny

Organizations

  • University of California

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Band Gaps
  • Band Structures
  • Conduction Bands
  • Covalent Bonds
  • Energy Bands
  • Gunn Effect
  • Ionic Bonds
  • Measurement
  • Microwaves
  • Optical Properties
  • Oscillation
  • Reflectivity
  • Semiconductors
  • Spectra
  • Valence
  • Valence Bands

Readers

  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene