Thin Film Transistor-Addressed Display Device.
Abstract
This is the final report on Contract DAAB07-72-C-0061; the objective of which was an examination of the feasibility of fabricating a multielement dot-matrix display using electroluminescent output and an integrated thin film transistor addressing array. The concepts have been validated, good quality functional displays were made and delivered to the US Army. Three formats were examined: 6 in. x 6 in., 20 lpi (12,000 elements), 6 in. x 6 in., 30 lpi (25,000 elements) and 6 in. x 3 in. approximately 30 lpi (17,000 elements); the latter display was designed to be integrated into a US Army field system, the TACFIRE forward observer terminal, and the Digital Message Device. Specimen displays are now being fitted into that device for field trials. The TFT arrays met all the expectations of this program. Devices in the array could switch 300 Vpp power, they demonstrated excellent uniformities which allowed the presentation of good grey scale imagery as well as alphanumerics. Devices with extremely low leakage currents (< 1 nA) were achieved. Active matrix arrays containing 90,000 devices (60,000 TFTs and 30,000 capacitors) were made containing only a small number of imperfections, which did not interfere with the operation of the panel. The resulting displays clearly demonstrated the point that the use of the TFT addressing array allows the selection of an optimal display media.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1977
- Accession Number
- ADA052084
Entities
People
- David H. Davies
- Fang C. Luo
- Thomas P. Brody