Liquid Phase Epitaxy of GaAsSb on InP Substrates.

Abstract

The Ga-As-Sb system is shown to exhibit immiscibility-like behavior, i. e., certain solid compositions do not exist, for growth from ternary melts in spite of the fact that the pseudobinary system is fully miscible. The ternary melt miscibility gap narrows with increasing growth temperature and disappears above a certain temperature but even then the solid composition remains a very sensitive function of the growth temperature.

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Document Details

Document Type
Technical Report
Publication Date
Jul 31, 1977
Accession Number
ADA052291

Entities

People

  • Clifton G. Fonstad

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Counter IED
  • Weapons Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Contracts
  • Decomposition
  • Diagrams
  • Electron Beams
  • Electrons
  • Elements
  • Laser Diodes
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Massachusetts
  • Materials
  • Materials Science
  • Microprobes
  • Military Research
  • Phase
  • Phase Diagrams

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology