Heterojunction Gate GaAs FET Study.

Abstract

This project is aimed at developing the technology to fabricate A1.5Ga.5As gate GaAs FETs with submicron gate dimensions and to compare the dc, large-signal switching and small-signal microwave performance of both normally-on and normally-off devices with similar Schottky-barrier devices. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1977
Accession Number
ADA052292

Entities

People

  • G. A. Antypas
  • H. Morkoc
  • R. Sankaran
  • S. G. Bandy

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Circuits
  • Electronics Laboratories
  • Energy Bands
  • Epitaxial Growth
  • Fabrication
  • Field Effect Transistors
  • Fluids
  • Frequency
  • Heterojunctions
  • High Temperature
  • Integrated Circuits
  • Liquid Phases
  • Low Temperature
  • Materials
  • Semiconductors
  • Square Roots
  • Vapor Phases

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology