The Influence of Contact Conditions and Circuit on Short Negative Differential Mobility Semiconducting Devices.

Abstract

The nonlinear semiconducting gallium arsenide metal-semiconductor field effect transistor has been described at the recent Cornell University Electrical Engineering Conference as 'the most active area of research in the microwave device field for the past five years'. The reason given for this activity is that as a low noise device over the frequency range of 4-20 GHz it demonstrates higher gain and lower noise than any other device. Secondly, as a power device the GaAs FET is similar in power but with higher gain when compared to silicon bipolar transistors over the frequency range of 4-6 GHz. It exceeds that of silicon at higher frequencies. Thirdly, it is a broadband device. In this important area of microwave device research, we have developed, under ONR sponsorship, a reliable time dependent transient simulation of nonlinear semiconducting FETS. An important aspect of the study is that the solutions are self-consistent and include the crucial influence of the external circuit.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1977
Accession Number
ADA052413

Entities

People

  • H. L. Grubin

Organizations

  • United Technologies Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Circuits
  • Compound Semiconductors
  • Current Density
  • Electric Fields
  • Electrical Engineering
  • Electronics Laboratories
  • Field Effect Transistors
  • Gallium Arsenides
  • Gunn Diodes
  • Integrated Circuits
  • Materials
  • Military Research
  • Power Electronics
  • Resistance
  • Semiconductor Devices
  • Semiconductors
  • Transistors

Readers

  • Microwave Engineering.
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics