Vertical Channel Metal-Oxide-Silicon Field Effect Transistor.

Abstract

Three new VMOST geometries were designed and studied for improvements of power-frequency performances. Output powers up to 10W have been obtained at 1 GHz, with associated gains of 5 dB, from top-source VMOST devices fabricated using a low angle (60 deg.) gate evaporation. The sources of gate oxide contamination in V-groove type devices and a model for the variation of turn-on resistance with V-groove depth were also investigated. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1976
Accession Number
ADA052426

Entities

People

  • D. A. Tremere
  • E. T. Watkins
  • J. G. Oakes
  • R. A. Wichstrom
  • T. M. S. Heng

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Computer Simulations
  • Epitaxial Growth
  • Fabrication
  • Field Effect Transistors
  • Frequency
  • Frequency Bands
  • Geometry
  • Low Angles
  • Low Voltage
  • Materials
  • Military Research
  • New York
  • Power Gain
  • Simulations
  • Space Charge
  • United States

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Microwave Engineering.
  • Semiconductor Device Technology