Profiling of GaAs Using a Distributed RC Structure.

Abstract

The objective of this research was to compare the results of an experiment using a distributed RC structure to evaluate both the impurity profile and mobility of ion-implanted layers in GaAs with the results of the differential Hall-effect technique for the same type of samples. The distributed RC structure experiments were to be performed at The University of New Mexico (UNM) and the differential Hall-effect experiments were to be performed at AFAL-DHR at WPAFB. The theory of the distributed RC technique is presented in the Appendix. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1978
Accession Number
ADA052597

Entities

People

  • Roy A. Colclaser

Organizations

  • University of New Mexico

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Capacitance
  • Composite Materials
  • Dissipation
  • Dissipation Factor
  • Engineering
  • Hall Effect
  • Impedance
  • Impurities
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • Mobility
  • New Mexico
  • Resistance
  • Semiconductors
  • Universities

Readers

  • Calculus or Mathematical Analysis
  • Distributed Systems and Data Platform Development
  • Materials Science and Engineering.