Impurity and Defect Behavior in High-Purity Epitaxial GaAs

Abstract

This report summarizes research performed in an effort to obtain a better understanding of impurity and defect behavior in epitaxial GaAs. This work includes the identification of residual defects, the development of a model for impurity incorporation, and an examination of impurity gradient effects.

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Document Details

Document Type
Technical Report
Publication Date
Dec 31, 1977
Accession Number
ADA053116

Entities

People

  • C. M. Wolfe

Organizations

  • Washington University in St. Louis

Tags

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Classification
  • Detectors
  • Electronic Materials
  • High Temperature
  • Identification
  • Impurities
  • Materials
  • Measurement
  • Missouri
  • New York
  • Residuals
  • Scientific Research
  • Security
  • Substrates
  • Transitions

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.