Damage Profiles in Silicon and their Impact on Device Reliability

Abstract

The principle of defect engineering is applied to GaAs substrates to produce epitaxial layers of low crystallographic defect density. Defect engineering is achieved through control of surface stresses in GaAs wafers during high temperature processing. Surface stress control is obtained through Impact Sound Stressing damage introduced on wafer backsides before epitaxial processing. Thus, epitaxial GaAs layers obtained through liquid phase epitaxy contain low dislocation numbers through confinements of threading dislocations to the epitaxial-substrate interface. A detailed analysis of ISS damage in GaAs before and after annealing is also given. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1978
Accession Number
ADA053195

Entities

People

  • G. H. Schwuttke
  • Kaipei Yang

Organizations

  • International Business Machines Corporation (Armonk, NY)

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Assembly
  • Batch Processing
  • Electron Microscopes
  • Electron Microscopy
  • Epitaxial Growth
  • Materials
  • Materials Processing
  • Materials Science
  • Measurement
  • Microscopes
  • Microscopy
  • Resonant Frequency
  • Scanning Electron Microscopy
  • Semiconductor Devices
  • Semiconductors
  • Solid State Physics
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology