Progress Toward the Crosstie Memory V.
Abstract
This is the fifth annual technical report of progress toward the crosstie memory and it emphasizes work done during the past year. There are four previous reports which can be obtained upon request of the authors of this report. The previous reports present a basis for this report. In the crosstie memory, information is stored, propagated and detected in magnetic domain walls of Permalloy films about 370 A thick. Serrated edges on narrow thin film permalloy strips are used to center a domain wall in each strip and provide stable positions for crossties and Bloch lines. The magnetoresistance effect in the information bearing film is used for detection. The anticipated performance of the crosstie memory includes a shift rate of 20,000,000 bits/sec, a bit density greater than 150,000 bits/sq.cm., and operating temperature range from -50 to 100 C, nonvolatility, low cost and low power consumption. Also, the memory can be fabricated on Si or SiO2 and integrated with semiconductor devices. At this time all the necessary functions associated with the shift registers have been demonstrated and shown to be compatible. Present emphasis is being placed on widening the margins of operation so that a reliable and manufacturable device will result.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 05, 1978
- Accession Number
- ADA053288
Entities
People
- L. J. Schwee
- R. N. Lee
- W. E. Anderson
- Y. J. Liu
Organizations
- Naval Ordnance Laboratory