Electrical Properties of Pb0.8Sn0.2Te Epitaxial Films.

Abstract

The temperature dependences of the Hall coefficient and resistivity of Pb0.8Sn0.2Te epitaxial films have been measured from 4.2 to 300K. The results show that no appreciable strain is induced in the epitaxial films grown on BaF2 substrates because of differential thermal contraction below room temperature. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1977
Accession Number
ADA053456

Entities

People

  • J. R. Lowney
  • R. F. Bis
  • S. C. Foti

Organizations

  • Naval Ordnance Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Energy and Power Technologies
  • Sensors

DTIC Thesaurus Topics

  • Air Force
  • Band Gaps
  • Band Structures
  • Carrier Mobility
  • Conduction Bands
  • Crystal Lattice Vibrations
  • Crystal Structure
  • Dispersion Relations
  • Electrical Properties
  • Energy Bands
  • Energy Gaps
  • Equations
  • Films
  • Scattering
  • Thermal Expansion
  • Thin Films
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology