Damage Profiles in Silicon and Their Impact on Device Reliability

Abstract

N-type Si was implanted with 200 keV Cs(+) with doses ranging from 10 to the 13th power to 10 to the 15th power ions/sq cm. After nitrogen anneal MOS capacitors were formed by thermal oxidation and Al deposition. Transmission electron microscopy was used to study the residual ion damage.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1977
Accession Number
ADA053538

Entities

People

  • G. H. Schwuttke

Organizations

  • International Business Machines Corporation (Armonk, NY)

Tags

DTIC Thesaurus Topics

  • Batch Processing
  • Crystal Lattices
  • Electrical Measurement
  • Electron Microscopes
  • Electron Microscopy
  • Energy Bands
  • Energy Levels
  • Heat Treatment
  • High Temperature
  • Ion Implantation
  • Mass Spectrometry
  • Measurement
  • Microscopes
  • Point Defects
  • Semiconductor Devices
  • Semiconductors
  • Temperature Gradients

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene