The Anomalous Voltage Response of the P(+)N-N(+) Device and its Effects on Second Breakdown.
Abstract
Numerical simulations and experimental measurements have been carried out to study the transient behavior of the P(+)N-N(+) structure under different levels of injection in both the reverse and the forward pulsed directions. A major part of this research is devoted to the explanation of the anomalous voltage that appears across the diode terminals when pulsed in the forward direction with current densities in the range of 1000 to 1,000,000 amp/sq cm. A numerical iterative method of solution of the one-dimensional basic two-carrier transport equations, coupled with Maxwell's and Poisson's equations, describing the behavior of the semiconductor device is presented. The pure implicit technique along with the Newton-Raphson iteration are used to solve the equations, while the explicit technique is used to obtain a first guess to start the iterative solution. A numerical method is arrived at for the determination of effective transient lifetimes in the case of excess diffusion due to very high current density. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1977
- Accession Number
- ADA053539
Entities
People
- G. W. Neudeck
- L. R. Razouk
Organizations
- Purdue University