New Passivation Methods of GaAs.
Abstract
Detailed measurement of compositional profiles for anodically grown native oxides were undertaken using E.S.C.A. The results reported here show in particular intersting features near the interface. Accurate measurements of thickness-overvoltage characteristics show no observable space charge effects involved in the anodic growth mechanism. Conditions under which porous oxides may be formed have been investigated. Activation energies for the long-term resistance stability of native oxides were obtained. properties of thin anodic films are reported and the previously reported M.A.O.S. structure has now been successfully used to fabricate long-term information storage M.A.O.S.F.E.Ts. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1978
- Accession Number
- ADA053663
Entities
People
- A. Colquhoun
- A. F. A. B. El-safti
- B. Bayraktaroglu
- P. Breeze
- S. J. Hannah
Organizations
- Newcastle University